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參數(shù)資料
| 型號： | MCRF360 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | CONNECTOR |
| 中文描述： | 連接器 |
| 文件頁數(shù)： | 6/23頁 |
| 文件大?。?/td> | 568K |
| 代理商： | MCRF360 |
MCRF355/360
DS21287F-page 6
2002 Microchip Technology Inc.
TABLE 1-5:
PAD FUNCTION TABLE
TABLE 1-6:
DIE MECHANICAL DIMENSIONS
Name
Function
Ant. A
Connected to external resonant circuit,
(Note 1)
Ant. B
Connected to external resonant circuit,
(Note 1)
V
SS
Connected to external resonant circuit,
(Note 1)
Device ground during Test mode
V
DD
DC voltage supply for programming and Test mode
CLK
Main clock pulse for programming and Test mode
V
PRG
Input/Output for programming and Test mode
Note 1:
See Figure 3-1 for the connection with external resonant circuit.
Specifications
Min.
Typ.
Max.
Unit
Comments
Wafer Diameter
—
8
—
inch
Die separation line width
—
80
—
μ
m
Dice per wafer
—
12,000
—
die
Batch size
—
24
—
wafer
Bond pad opening
—
—
3.5 x 3.5
89 x 89
—
—
mil
μ
m
(Note 1, Note 2)
Die backgrind thickness
7.5
190.5
8
203.2
8.5
215.9
mil
μ
m
Sawed 8” wafer on frame
(option = WF)
(Note 3)
10
254
11
279.4
12
304.8
mil
μ
m
Bumped, sawed 8” wafer
on frame (option = WFB)
Unsawed wafer (option = W)
Unsawed 8” bumped
wafer (option = WB),
(Note 3)
Die passivation thickness (multilayer)
—
1.3
—
μ
m
(Note 4)
Die Size:
Die size X*Y before saw (step size)
Die size X*Y after saw
—
—
55.79 x 59.57
53.3 x 57.1
—
—
mil
mil
—
—
Note
1:
2:
3:
The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at least 0.1 mil.
Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.
As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as thick as the
application will allow.
The Die Passivation thickness (1.3
μ
m) can vary by device depending on the mask set used.
-
Layer 1: Oxide (undoped oxide)
-
Layer 2: PSG (doped oxide)
-
Layer 3: Oxynitride (top layer)
The conversion rate is 25.4
μ
m/mil.
4:
5:
Note:
Extreme care is urged in the handling and assembly of die products since they are susceptible to
mechanical and electrostatic damage.
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