參數(shù)資料
型號： MCRF360
廠商： Microchip Technology Inc.
英文描述： CONNECTOR
中文描述： 連接器
文件頁數(shù)： 3/23頁
文件大?。?/td> 568K
代理商： MCRF360
2002 Microchip Technology Inc.
DS21287F-page 3
MCRF355/360
1.0
ELECTRICAL CHARACTERISTICS
TABLE 1-1:
ABSOLUTE RATINGS
TABLE 1-2:
DC CHARACTERISTICS
Parameters
Symbol
Min
Max
Units
Conditions
Coil Current
I
PP
_
AC
—
40
mA
Peak-to-Peak coil current
Assembly temperature
T
ASM
—
265
°C
< 10 sec
Storage temperature
T
STORE
-65
150
°C
—
All parameters apply
across the specified
operating ranges, unless
otherwise noted.
Commercial (C):
T
AMB
= -20
o
C to 70
o
C
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Reading voltage
V
DDR
2.4
—
—
V
V
DD
voltage for reading
Hysteresis voltage
V
HYST
—
TBD
—
TBD
—
Operating current
I
DDR
—
7
10
μ
A
V
DD
= 2.4V during reading at
25°C
Testing voltage
V
DDT
—
4
—
V
—
Programming voltage:
High level input voltage
Low level input voltage
High voltage
V
IH
V
IL
V
HH
0.7 * V
DDT
—
—
—
—
20
—
0.3 * V
DDT
—
V
V
V
External DC voltage for
programming and testing
Current leakage during
SLEEP time
I
DD
_
OFF
—
10
—
nA
(Note 1)
Modulation resistance
R
M
—
3
4
DC resistance between Drain and
Source gates of the modulation
transistor (when it is turned on)
Pull-Down resistor
R
PDW
5
8
—
k
CLK and V
PRG
internal pull-down
resistor
Note 1:
This parameter is not tested in production.
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