參數(shù)資料
型號: MC56F8347VVFE
廠商: Freescale Semiconductor
文件頁數(shù): 76/172頁
文件大?。?/td> 0K
描述: IC DGTL SIGNAL CTLR 160-MAPBGA
標準包裝: 126
系列: 56F8xxx
核心處理器: 56800E
芯體尺寸: 16-位
速度: 60MHz
連通性: CAN,EBI/EMI,SCI,SPI
外圍設備: POR,PWM,溫度傳感器,WDT
輸入/輸出數(shù): 76
程序存儲器容量: 136KB(68K x 16)
程序存儲器類型: 閃存
RAM 容量: 6K x 16
電壓 - 電源 (Vcc/Vdd): 2.25 V ~ 3.6 V
數(shù)據(jù)轉換器: A/D 16x12b
振蕩器型: 外部
工作溫度: -40°C ~ 105°C
封裝/外殼: 160-BGA
包裝: 托盤
配用: MC56F8367EVME-ND - EVAL BOARD FOR MC56F83X
Thermal Design Considerations
56F8347 Technical Data, Rev.11
Freescale Semiconductor
167
Preliminary
Part 12 Design Considerations
12.1 Thermal Design Considerations
An estimation of the chip junction temperature, TJ, can be obtained from the equation:
TJ = TA + (RθJΑ x PD)
where:
The junction-to-ambient thermal resistance is an industry-standard value that provides a quick and easy
estimation of thermal performance. Unfortunately, there are two values in common usage: the value
determined on a single-layer board and the value obtained on a board with two planes. For packages such
as the PBGA, these values can be different by a factor of two. Which value is closer to the application
depends on the power dissipated by other components on the board. The value obtained on a single-layer
board is appropriate for the tightly packed printed circuit board. The value obtained on the board with the
internal planes is usually appropriate if the board has low-power dissipation and the components are well
separated.
When a heat sink is used, the thermal resistance is expressed as the sum of a junction-to-case thermal
resistance and a case-to-ambient thermal resistance:
RθJΑ = RθJC + RθCΑ
where:
RθJC is device-related and cannot be influenced by the user. The user controls the thermal environment to
change the case-to-ambient thermal resistance, RθCA . For instance, the user can change the size of the heat
sink, the air flow around the device, the interface material, the mounting arrangement on printed circuit
board, or change the thermal dissipation on the printed circuit board surrounding the device.
To determine the junction temperature of the device in the application when heat sinks are not used, the
Thermal Characterization Parameter (
ΨJT) can be used to determine the junction temperature with a
measurement of the temperature at the top center of the package case using the following equation:
TJ = TT + (ΨJT x PD)
where:
TA
= Ambient temperature for the package (oC)
RθJΑ = Junction-to-ambient thermal resistance (oC/W)
PD
= Power dissipation in the package (W)
RθJA = Package junction-to-ambient thermal resistance °C/W
RθJC
= Package junction-to-case thermal resistance °C/W
RθCA = Package case-to-ambient thermal resistance °C/W
TT = Thermocouple temperature on top of package (oC)
ΨJT = Thermal characterization parameter (oC)/W
PD = Power dissipation in package (W)
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