參數(shù)資料
型號: MBM29PL12LM
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數(shù): 67/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM
MBM29PL12LM
10
67
To Protect Sector Group
Write 60h to Sector Address
(A
6
= A
3
= A
2
= A
0
=V
IL
, A
1
= V
IH
)
Yes
No
No
PLSCNT = 1
Protection Other Sector
Group
Start
Sector Group Protection
Completed
Extended Sector Group
Protection Entry
Remove
V
ID
from RESET
Write Reset Command
RESET = V
ID
Wait to 4
μ
s
To Setup Sector Group
Protection Write XXXh/60h
Time Out 250
μ
s
To Verify Sector Group Protection
Write 40h to Sector Address
(A
6
= A
3
= A
2
= A
0
=V
IL
, A
1
= V
IH
)
Data = 01h
Device is Operating in
Temporary Sector Group
Unprotection Mode
Read from Sector Group
Address
(
A
6
= A
3
= A
2
= A
0
=V
IL
, A
1
= V
IH
)
Increment PLSCNT
No
Yes
Yes
Setup Next Sector Group
Address
No
Yes
PLSCNT = 25
Device Failed
Remove V
ID
from RESET
Write Reset Command
Extended Sector Group Protection Algorithm
相關(guān)PDF資料
PDF描述
MBM29PL12LM10PBT FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
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