參數(shù)資料
型號: MBM29PL12LM
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數(shù): 49/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM
MBM29PL12LM
10
49
Notes :
PA is address of the memory location to be programmed.
PD is data to be programmed at word address.
DQ
7
is the output of the complement of the data written to the device.
D
OUT
is the output of the data written to the device.
Figure indicates the last two bus cycles out of four bus cycle sequence.
t
CH
t
WP
t
WHWH1
t
WC
t
AH
CE
OE
t
RC
Address
Data
t
AS
t
OE
t
WPH
t
GHWL
t
DH
DQ
7
PD
A0h
D
OUT
WE
555h
PA
PA
t
OH
Data Polling
3rd Bus Cycle
t
CS
t
CE
t
DS
D
OUT
t
DF
Alternate WE Controlled Program Operation Timing Diagram
相關(guān)PDF資料
PDF描述
MBM29PL12LM10PBT FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
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