參數(shù)資料
型號(hào): MBM29PL12LM
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁(yè)數(shù): 50/72頁(yè)
文件大?。?/td> 1036K
代理商: MBM29PL12LM
MBM29PL12LM
10
50
t
CP
t
DS
t
WHWH1
t
WC
t
AH
WE
OE
Address
Data
t
AS
t
CPH
t
DH
DQ
7
A0h
D
OUT
CE
555h
PA
PA
Data Polling
3rd Bus Cycle
t
WS
t
WH
t
GHEL
PD
Notes :
PA is address of the memory location to be programmed.
PD is data to be programmed at word address.
DQ
7
is the output of the complement of the data written to the device.
D
OUT
is the output of the data written to the device.
Figure indicates the last two bus cycles out of four bus cycle sequence.
Alternate CE Controlled Program Operation Timing Diagram
相關(guān)PDF資料
PDF描述
MBM29PL12LM10PBT FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
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