參數(shù)資料
型號: MBM29PL12LM
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數(shù): 43/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM
MBM29PL12LM
10
43
2.
AC Characteristics
Read Only Operations Characteristics
* : Test Conditions :
Output Load
Input rise and fall times : 5 ns
Input pulse levels
Timing measurement reference level
: 1 TTL gate and 30 pF
: 0.0 V or V
CC
Input
Output : V
CC
/ 2
: V
CC
/ 2
Parameter
Symbols
Condition
Value*
Unit
10
JEDEC
Standard
Min
Max
Read Cycle Time
t
AVAV
t
RC
100
ns
Address to Output Delay
t
AVQV
t
ACC
CE = V
IL
,
OE = V
IL
100
ns
Chip Enable to Output Delay
t
ELQV
t
CE
OE = V
IL
100
ns
Page Read Cycle Time
t
PRC
25
ns
Page Address to Output Delay
t
PACC
CE = V
IL
,
OE = V
IL
30
ns
Output Enable to Output Delay
t
GLQV
t
OE
30
ns
Chip Enable to Output High-Z
t
EHQZ
t
DF
25
ns
Output Enable
Hold Time
Read
t
OEH
0
ns
Toggle and Data Polling
10
ns
Output Enable to Output High-Z
t
GHQZ
t
DF
25
ns
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
t
AXQX
t
OH
0
ns
RESET Pin Low to Read Mode
t
READY
20
μs
Test Conditions
C
L
3.3 V
Diode = 1N3064
or Equivalent
2.7 k
Device
Under
Test
Diode = 1N3064
or Equivalent
6.2 k
Output load circuit
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