參數(shù)資料
型號: MBM29PL12LM
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數(shù): 44/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM
MBM29PL12LM
10
44
Write (Erase/Program) Operations
(Continued)
Parameter
Symbol
Value
Unit
10
JEDEC
Standard
Min
Typ
Max
Write Cycle Time
t
AVAV
t
WC
100
ns
Address Setup Time
t
AVWL
t
AS
0
ns
Address Setup Time to OE Low During
Toggle Bit Polling
t
ASO
15
ns
Address Hold Time
t
WLAX
t
AH
45
ns
Address Hold Time from CE or OE High
During Toggle Bit Polling
t
AHT
0
ns
Data Setup Time
t
DVWH
t
DS
45
ns
Data Hold Time
t
WHDX
t
DH
0
ns
Output Enable Setup Time
t
OES
0
ns
CE High During Toggle Bit Polling
t
CEPH
20
ns
OE High During Toggle Bit Polling
t
OEPH
20
ns
Read Recover Time Before Write
(OE High to WE Low)
t
GHWL
t
GHWL
0
ns
Read Recover Time Before Write
(OE High to CE Low)
t
GHEL
t
GHEL
0
ns
CE Setup Time
t
ELWL
t
CS
0
ns
WE Setup Time
t
WLEL
t
WS
0
ns
CE Hold Time
t
WHEH
t
CH
0
ns
WE Hold Time
t
EHWH
t
WH
0
ns
CE Pulse Width
t
ELEH
t
CP
35
ns
Write Pulse Width
t
WLWH
t
WP
35
ns
CE Pulse Width High
t
EHEL
t
CPH
25
ns
Write Pulse Width High
t
WHWL
t
WPH
30
ns
Effective Page
Programming Time
(Write Buffer Programming)
Per Word
t
WHWH1
t
WHWH1
23.5
μs
Programming Time
Word
100
μs
Sector Erase Operation *
1
t
WHWH2
t
WHWH2
1.0
s
V
CC
Setup Time
t
VCS
50
μs
Recovery Time From RY/BY
t
PB
0
ns
Erase/Program Valid to RY/BY Delay
t
BUSY
90
ns
Rise Time to V
ID
*
2
t
VIDR
500
ns
Rise Time to V
ACC
*
3
t
VACCR
500
ns
Voltage Transition Time *
2
t
VLHT
4
μs
相關(guān)PDF資料
PDF描述
MBM29PL12LM10PBT FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
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