- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382289 > MBM29PL12LM (Fujitsu Limited) FLASH MEMORY 128 M (16M ?8/8M ?16) BIT PDF資料下載
參數(shù)資料
| 型號： | MBM29PL12LM |
| 廠商： | Fujitsu Limited |
| 英文描述： | FLASH MEMORY 128 M (16M ?8/8M ?16) BIT |
| 中文描述： | 快閃記憶體128米（1,600？8/8M？16）位 |
| 文件頁數(shù)： | 3/72頁 |
| 文件大?。?/td> | 1036K |
| 代理商： | MBM29PL12LM |
第1頁第2頁當(dāng)前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
MBM29PL12LM
10
3
■
FEATURES
0.23
μ
m Process Technology
Single 3.0 V read, program and erase
Minimizes system level power requirements
Industry-standard pinouts
56-pin TSOP (1)
80-ball FBGA (Package suffix: PBT)
Minimum 100,000 program/erase cycles
High performance Page mode
Fast 8 bytes / 4 words access capabililty
Sector erase architecture
256
×
64K byte and 32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase
HiddenROM
256 bytes / 128 words of HiddenROM, accessible through a “HiddenROM Entry” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At V
IL
, allows protection of outermost two 8K bytes / 4K words sectors, regardless of sector protection/unpro-
tection status
At V
ACC
, increases program performance
Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Low V
CC
write inhibit
≤
2.5 V
Sector Group Protection
Hardware method disables any combination of sector groups from program or erase operations
Sector Group Protection Set function by Extended sector protect command
Fast Programming Function by Extended Command
Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin
This feature allows code changes in previously locked sectors
In accordance with CFI (Common Flash Memory Interface)
*
: Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29PL12LM10PBT | FLASH MEMORY 128 M (16M ?8/8M ?16) BIT |
| MBM29PL12LM10PCN | FLASH MEMORY 128 M (16M ?8/8M ?16) BIT |
| MBM30LV0064-PFTN | 64M (8M X 8) BIT NAND-type |
| MBM30LV0064-PFTR | 64M (8M X 8) BIT NAND-type |
| MBM30LV0032 | 32M (4M X 8) BIT NAND-type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM30000 | 功能描述:BRACKET SIDE MOUNT RoHS:是 類別:工業(yè)控制，儀表 >> 配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:Aero-Motive® 130117 附件類型:拖車帶 適用于相關(guān)產(chǎn)品:標(biāo)準(zhǔn)盒式跟蹤系統(tǒng) 其它名稱:WM6183 |
| MBM30035001 | 制造商:LG Corporation 功能描述:Card,Technical |
| MBM30035015 | 制造商:LG Corporation 功能描述:Card,Technical |
| MBM300A6 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
| MBM300GR12A | 制造商:n/a 功能描述:IGBT Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。