參數(shù)資料
型號: MBM29PL12LM10PBT
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數(shù): 46/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM10PBT
MBM29PL12LM
10
46
ERASE AND PROGRAMMING PERFORMANCE
TSOP (1) PIN CAPACITANCE
Notes :
Test conditions T
A
=
+
25°C, f = 1.0 MHz
DQ
15
/A-
1
pin capacitance is stipulated by output capacitance.
FBGA PIN CAPACITANCE
Notes :
Test conditions T
A
=
+
25°C, f = 1.0 MHz
DQ
15
/A-
1
pin capacitance is stipulated by output capacitance.
Parameter
Limits
Unit
Remarks
Min
Typ
Max
Sector Erase Time
1
15
s
Excludes programming time prior to
erasure
Programming Time
100
3000
μs
Excludes system-level overhead
Effective Page Programming
Time
(Write Buffer Programming)
23.5
μs
Chip Programming Time
1200
s
Absolute Maximum
Programming Time (16 words)
6
ms
Non programming within the same
page
Erase/Program Cycle
100,000
cycle
Parameter
Symbol
Test Setup
Value
Unit
Typ
Max
Input Capacitance
C
IN
V
IN
= 0
8
10
pF
Output Capacitance
C
OUT
V
OUT
= 0
8.5
12
pF
Control Pin Capacitance
C
IN2
V
IN
= 0
8
10
pF
Reset pin and WP/ACC Pin
Capacitance
C
IN3
V
IN
= 0
20
25
pF
Parameter
Symbol
Test Setup
Value
Unit
Typ
Max
Input Capacitance
C
IN
V
IN
= 0
8
10
pF
Output Capacitance
C
OUT
V
OUT
= 0
8.5
12
pF
Control Pin Capacitance
C
IN2
V
IN
= 0
8
10
pF
Reset pin and WP/ACC Pin
Capacitance
C
IN3
V
IN
= 0
15
20
pF
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