參數資料
型號: MBM29PL12LM10PBT
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數: 27/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM10PBT
MBM29PL12LM
10
27
Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the devices in order to
change data. The Sector Group Unprotection mode is activated by setting the RESET pin to high voltage (V
ID
).
During this mode, formerly protected sector groups can be programmed or erased by selecting the sector group
addresses. Once the V
ID
is taken away from the RESET pin, all the previously protected sector groups will be
protected again. Refer to “Temporary Sector Group Unprotection Timing Diagram” in
TIMING DIAGRAM and
“Temporary Sector Group Unprotection Algorithm” in
FLOW CHART.
Hardware Reset
The devices may be reset by driving the RESET pin to V
IL
from V
IH
. The RESET pin has a pulse requirement
and has to be kept low (V
IL
) for at least “t
RP
” in order to properly reset the internal state machine. Any operation
in the process of being executed will be terminated and the internal state machine will be reset to the read mode
“t
READY
” after the RESET pin is driven low. When the RESET pin is low, the devices will be in the standby mode
for the duration of the pulse and all the data output pins will be tri-stated. If a hardware reset occurs during a
program or erase operation, the data at that particular location will be corrupted.
Furthermore, once the RESET pin goes high, the devices require an additional “t
RH
” before it will allow read
access.
Write Protect (WP)
The Write Protection function provides a hardware method of protecting certain first 64K bytes / 32K words
sector without using V
ID
. This function is one of two provided by the WP/ACC pin.
If the system asserts V
IL
on the WP/ACC pin, the device disables program and erase functions in the first 64K
bytes / 32K words sector independently of whether this sector was protected or unprotected using the method
described in “Sector Group Protection" above.
If the system asserts V
IH
on the WP/ACC pin, the device reverts of whether the first 64K bytes / 32K words
sectors were last set to be protected to the unprotected status. Sector protection or unprotection for this sector
depends on whether this was last protected or unprotected using the method described in “Sector protection/
unprotection”.
Accelerated Program Operation
The device offers accelerated program operation which enables programming in high speed. If the system asserts
V
ACC
to the WP/ACC pin, the device automatically enters the acceleration mode and the time required for program
operation will reduce to about 85%. This function is primarily intended to allow high speed programing, so caution
is needed as the sector group becomes temporarily unprotected.
The system would use a fast program command sequence when programming during acceleration mode. Set
command to fast mode and reset command from fast mode are not necessary. When the device enters the
acceleration mode, the device is automatically set to fast mode. Therefore, the present command and sequence
could be used for programming and detection of completion during acceleration mode.
Removing V
ACC
from the WP/ACC pin returns the device to normal operation. Do not remove V
ACC
from the WP/
ACC pin while programming. See “Accelerated Program Timing Diagram” in
TIMING DIAGRAM.
V
CCQ
V
CCQ
determines the MBM29PL12LM voltage output. V
CCQ
facilitates signal exchange within devices that operate in different
voltage.
相關PDF資料
PDF描述
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
MBM30LV0032-PFTN 32M (4M X 8) BIT NAND-type
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