參數(shù)資料
型號： MBM29PL12LM10PBT
廠商： Fujitsu Limited
英文描述： FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述： 快閃記憶體128米（1,600？8/8M？16）位
文件頁數(shù)： 41/72頁
文件大小： 1036K
代理商： MBM29PL12LM10PBT
MBM29PL12LM
10
41
■
ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
Parameter
Symbol
Conditions
Value
Unit
Min
Typ
Max
Input Leakage Current
I
LI
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
Max
WP/ACC pin
–2.0
—
+2.0
μA
Others
–1.0
—
+1.0
Output Leakage Current
I
LO
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
–1.0
—
+1.0
μA
A
9
, OE, RESET Inputs Leakage
Current
I
LIT
V
CC
= V
CC
Max,
A
9
, OE, RESET = 12.5 V
—
—
35
μA
V
CC
Active Current
(Read ) *
1,
*
2
I
CC1
CE = V
IL
, OE = V
IH
,
f = 5 MHz
Word
—
15
25
mA
Byte
—
15
25
CE = V
IL
, OE = V
IH
,
f = 10 MHz
Word
—
35
50
Byte
—
35
50
V
CC
Active Current
(Intra-Page Read ) *
2
I
CC2
CE = V
IL
, OE = V
IH
, t
PRC
= 25ns,
4-Word
—
10
20
mA
V
CC
Active Current
(Program / Erase) *
2,
*
3
I
CC3
CE = V
IL
, OE = V
IH
—
50
60
mA
V
CC
Standby Current *
2
I
CC4
CE = V
CC
±
0.3 V,
RESET = V
CC
±
0.3 V,
OE = V
IH
, WP/ACC = V
CC
±
0.3 V
RESET = V
CC
±
0.3 V,
WP/ACC = V
CC
±
0.3 V
CE = V
SS
±
0.3 V,
RESET = V
CC
±
0.3 V,
V
IN
= V
CC
±
0.3V or V
ss
±
0.3V,
WP/ACC = V
CC
±
0.3 V
—
1
5
μA
V
CC
Reset Current *
2
I
CC5
—
1
5
μA
V
CC
Automatic Sleep Current *
4
I
CC6
—
1
5
μA
V
CC
Active Current
(Erase-Suspend-Program) *
2
I
CC7
CE = V
IL
, OE = V
IH
—
50
60
mA
ACC Accelerated Program
Current
I
ACC
CE = V
IL
, OE = V
IH
,
Vcc = Vcc Max,
WP/ACC =V
ACC
Max
WP/ACC pin
—
—
45
mA
Vcc Pin
—
—
60
Input Low Level
V
IL
—
–0.5
0.7
×
V
CC
—
0.6
V
Input High Level
V
IH
—
—
V
CC
+ 0.3
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
V
ACC
V
CC
= 3.0 V to 3.6 V
11.5
12.0
12.5
V
Voltage for Autoselect, and
Temporary Sector Unprotected
V
ID
V
CC
= 3.0 V to 3.6 V
11.5
12.0
12.5
V
Output Low Voltage Level
V
OL
I
OL
= 4.0 mA, V
CC
= V
CC
Min
—
—
0.45
V
Output High Voltage Level
V
OH
I
OH
= –2.0 mA, V
CC
= V
CC
Min
0.85
×
V
CCQ
—
—
V
Low V
CC
Lock-Out Voltage
V
LKO
—
2.3
—
2.5
V
相關(guān)PDF資料
PDF描述
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
MBM30LV0032-PFTN 32M (4M X 8) BIT NAND-type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM30000 功能描述:BRACKET SIDE MOUNT RoHS:是 類別:工業(yè)控制，儀表 >> 配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:Aero-Motive® 130117 附件類型:拖車帶 適用于相關(guān)產(chǎn)品:標(biāo)準(zhǔn)盒式跟蹤系統(tǒng) 其它名稱:WM6183
MBM30035001 制造商:LG Corporation 功能描述:Card,Technical
MBM30035015 制造商:LG Corporation 功能描述:Card,Technical
MBM300A6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
MBM300GR12A 制造商:n/a 功能描述:IGBT Module
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*