參數(shù)資料
型號(hào): MBM29PL12LM10PBT
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁(yè)數(shù): 24/72頁(yè)
文件大?。?/td> 1036K
代理商: MBM29PL12LM10PBT
MBM29PL12LM
10
24
(Continued)
A
0
to A
6
DQ
0
to DQ
15
Description
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0008h
Address Sensitive Unlock
Required
46h
0002h
Erase Suspend
(02h = To Read & Write)
47h
0001h
Number of sectors in per group
48h
0001h
Sector Temporary Unprotection
(01h = Supported)
49h
0004h
Sector Group Protection Algorithm
4Ah
0000h
Dual Operation
(00h = Not Supported)
4Bh
0000h
Burst Mode Type
(00h = Not Supported)
4Ch
0001h
Page Mode Type
(01h = 4-Word Page Supported)
4Dh
00B5h
V
ACC
(Acceleration) Supply Minimum
DQ
7
to DQ
4
: 1V/bit,
DQ
3
to DQ
0
: 100mV/bit
4Eh
00C5h
V
ACC
(Acceleration) Supply Maximum
DQ
7
to DQ
4
: 1V/bit,
DQ
3
to DQ
0
: 100mV/bit
4Fh
00XXh
CFI Write Protect
(04h
=
Uniform Sectors Bottom Write Protection)
50h
01h
Program Suspend
(01h = Supported)
相關(guān)PDF資料
PDF描述
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
MBM30LV0032-PFTN 32M (4M X 8) BIT NAND-type
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