參數資料
型號: M13S128324A-5BG
廠商: Electronic Theatre Controls, Inc.
英文描述: Modify typing error of Pin Arrangement
中文描述: 修改輸入錯誤的管腳配置
文件頁數: 25/48頁
文件大?。?/td> 803K
代理商: M13S128324A-5BG
ES MT
M13S128324A
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2006
Revision : 1.0 25/48
Read With Auto Precharge
If a read with auto-precharge command is initiated, the DDR SDRAM automatically enters the precharge operation BL/2 clock
later from a read with auto-precharge command when t
RAS
(min) is satisfied. If not, the start point of precharge operation will be
delayed until t
RAS
(min) is satisfied. Once the precharge operation has started the bank cannot be reactivated and the new
command can not be asserted until the precharge time (t
RP
) has been satisfied
<Burst Length = 4, CAS Latency = 3>
0
1
2
CL K
C LK
3
4
5
6
7
8
COMMAND
B a nk A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
R ea d A
Auto Pre cha rg e
CA S Lat en cy = 3
DQS
DQ's
Dout 0 Dout 1 Dout 2 Dout 3
t
R AP
At burst read / write with auto precharge, CAS interrupt of the same bank is illegal.
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相關代理商/技術參數
參數描述
M13S128324A-5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S128324A-5LG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S128324A-5LIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S128324A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S128324A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM