參數(shù)資料
型號: M13S128324A-5BG
廠商: Electronic Theatre Controls, Inc.
英文描述: Modify typing error of Pin Arrangement
中文描述: 修改輸入錯誤的管腳配置
文件頁數(shù): 16/48頁
文件大?。?/td> 803K
代理商: M13S128324A-5BG
ES MT
M13S128324A
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2006
Revision : 1.0 16/48
Essential Functionality for DDR SDRAM
Burst Read Operation
Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the Burst read command is
issued by asserting CS and CAS low while holding RAS and
WE
high at the rising edge of the clock (CLK) after t
RCD
from
the bank activation. The address inputs determine the starting address for the Burst, The Mode Register sets type of burst
(Sequential or interleave) and burst length (2, 4, 8). The first output data is available after the CAS Latency from the READ
command, and the consecutive data are presented on the falling and rising edge of Data Strobe (DQS) adopted by DDR SDRAM
until the burst length is completed.
<Burst Length = 4, CAS Latency = 3>
0
1
2
3
4
5
6
7
8
CO MMAND
READ A
NOP
NO P
NOP
NO P
NOP
NOP
NOP
NO P
CL K
CL K
CAS L at enc y =3
DQS
DQ' s
D o u t0 Do u t 1 Do u t2 D o u t3
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M13S128324A-5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM
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M13S128324A-5LIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S128324A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S128324A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Double Data Rate SDRAM