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參數(shù)資料
| 型號(hào)： | KM29V64000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 8米× 8位NAND閃存（8米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 9/24頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | KM29V64000T |
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KM29V64000T
FLASH MEMORY
9
Identifying Invalid Block(s) in the KM29V64000
INVALID BLOCKS
The KM29V64000 Flash device may or may not contain up to 10 invalid blocks. Invalid blocks are defined as blocks that contain on e
or more invalid bits. Typically, an invalid block will contain a single bad bit. Devices with invalid block(s) have the same qua lity level
as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performanc e of
valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design mus t be
able to mask out the invalid block(s) via address mapping. The 1st block of the KM29V64000, however, is fully guaranteed to be a
good block.
KM29V64000 Technical Notes
All device locations are erased(FFh) prior to shipping. Device with invalid Block(s) will be randomly written with 00h data with in the
first or second page in the invalid Block(s). These pages may or may not contain the invalid cell(s). The 00h data just marks th e
block(s) that contains the invalid cell(s). The system must be able to recognize invalid block(s) via the following suggested fl ow chart
(Figure 1).
Figure 1. Flow chart to create invalid block table.
Start
Set : Block = 0
Check "FF"
Set : Block n + 1
Block = 1023
End
invalid block(s) Table
No
No
Yes
Yes
Create (or update)
*
*
For the 1st or 2nd page
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V64001RS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AIT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) |
| KM29W16000AIT | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V64000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY |
| KM29V64001RS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
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