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參數(shù)資料
| 型號： | KM29V64000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| 中文描述： | 8米× 8位NAND閃存（8米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 16/24頁 |
| 文件大小： | 293K |
| 代理商： | KM29V64000T |
KM29V64000T
FLASH MEMORY
16
SEQUENTIAL ROW READ OPERATION
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
00H
A
0
~ A
7
Busy
M
Output
A
9
~ A
16
A
17
~ A
22
Dout
N
Dout
N+1
Dout
N+2
Dout
527
Dout
0
Dout
1
Dout
2
Dout
527
Busy
M+1
Output
N
PAGE PROGRAM OPERATION
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
80H
70H
I/O
0
Din
N
1 up to 528 Byte Data
Sequential Input
Din
N+1
Din
527
10H
A
0
~ A
7
A
17
~ A
22
A
9
~ A
16
Sequential Data
Input Command
Column
Address
Page(Row)
Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
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≈
≈
≈
≈
≈
≈
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相關PDF資料 |
PDF描述 |
|---|---|
| KM29V64001RS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AIT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| KM29W16000AIT | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V64000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY |
| KM29V64001RS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
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