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參數(shù)資料
| 型號(hào)： | KM29V64000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 8米× 8位NAND閃存（8米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 3/24頁 |
| 文件大?。?/td> | 293K |
| 代理商： | KM29V64000T |
KM29V64000T
FLASH MEMORY
3
512B column
16 Byte Column
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
NOTE
: Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A
8
is internally set to "Low" or "High" by the 00h or 01h Command.
* X can be High or Low.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
3rd Cycle
A
17
A
18
A
19
A
20
A
21
A
22
*X
*X
V
CC
V
SS
X-Buffers
Latches
& Decoders
Y-Gating
64M + 2M Bit
NAND Flash
ARRAY
Command
Register
2nd half Page Register & S/A
(512 + 16)Byte x 16384
Y-Gating
1st half Page Register & S/A
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
9
- A
22
A
0
- A
7
Command
CE
RE
WE
CLE ALE WP
I/0 0
I/0 7
V
CC
Q
V
SS
A
8
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
16K Row
(=1024 Block)
512 Byte
8 bit
16 Byte
1 Block(=16 Row)
(8K + 256) Byte
I/O 0 ~ I/O 7
1 Page = 528 Bytes
1 Block = 528 Bytes x 16 Pages
= (8K + 256) Bytes
1 Device = 528 Bytes x 16Pages x 1024 Blocks
= 66 Mbits
Column Address
Row Address
(Page Address)
Page Register
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V64001RS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AIT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) |
| KM29W16000AIT | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V64000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY |
| KM29V64001RS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
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