參數(shù)資料
型號: KFM2G16Q2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 70/124頁
文件大小: 1550K
代理商: KFM2G16Q2M-DED6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
70
Data Protection Operation Flow Diagram
Start
Write ’DFS*, SBA’ of Flash
Add: F24Ch DQ=DFS*, SBA
Lock/Unlock/Lock-Tight
completed
Write ’lock/unlock/lock-tight’
Command
Add: F220h
DQ=002Ah/0023h/002Ch
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
* DFS is for DDP
Note) Samsung strongly recommends to follow the above flow chart
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