參數資料
型號: KFM2G16Q2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數: 113/124頁
文件大?。?/td> 1550K
代理商: KFM2G16Q2M-DED6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
113
6.11 Hot Reset Timing
NOTE:
1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept
unchanged after Warm/Hot reset operations.
2. Reset command : Command based reset or Register based reset
3. BP(Boot Partition): BootRAM area [0000h~01FFh, 8000h~800Fh]
4. 00F0h for BP, and 00F3h for F220h
AVD
BP(Note 3)
or F220h
ADQi
00F0h
or 00F3h
CE
INT
bit
WE
OE
t
Ready
2
RDY
Operation or Idle
OneNAND reset
Idle
OneNAND
Operation
High-Z
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KFN2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
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