參數(shù)資料
型號(hào): KFM2G16Q2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 116/124頁
文件大?。?/td> 1550K
代理商: KFM2G16Q2M-DED6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
116
NOTE :
1. VA = Valid Address. When the Internal Routine operation is complete, the toggle bits will stop toggling.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
t
CES
t
AAVDS
t
AAVDH
t
IAA
Hi-Z
CE
CLK
AVD
OE
A/DQ0:
A/DQ15
RDY
2)
VA
1)
t
RDYS
Status Data
VA
Status Data
t
ACH
t
ACS
t
AVDO
6.16 Toggle Bit Timing in Synchronous Read Mode
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KFN2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
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