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參數(shù)資料
| 型號(hào)： | KFM2G16Q2M-DED6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | MuxOneNAND FLASH MEMORY |
| 中文描述： | MuxOneNAND閃存 |
| 文件頁數(shù)： | 6/124頁 |
| 文件大?。?/td> | 1550K |
| 代理商： | KFM2G16Q2M-DED6 |
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MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
6
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
MuxOneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.
The chip integrates system features including:
A BootRAM and bootloader
Two independent bi-directional 2KB DataRAM buffers
A High-Speed x16 Host Interface
On-chip Error Correction
On-chip NOR interface controller
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications
that would otherwise have to use more NOR components.
MuxOneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with
the synchronous read performance of NOR. The NOR Flash host interface makes MuxOneNAND an ideal solution for applications
like G3 Smart Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating
systems, but lack a NAND controller.
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-perfor-
mance, small footprint solution.
1.4 Architectural Benefits
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| KFN2G16Q2M-DED5 | MuxOneNAND FLASH MEMORY |
| KFN2G16Q2M-DED6 | MuxOneNAND FLASH MEMORY |
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