參數(shù)資料
型號(hào): KFM2G16Q2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 114/124頁
文件大?。?/td> 1550K
代理商: KFM2G16Q2M-DED6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
114
6.13 Data Protection Timing During Power Down
V
CC
RP
NAND Write
Protected
Idle
MuxOneNAND Reset
INT
bit
MuxOneNAND
Operation
typ. 1.3V
0V
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.3V. RP pin provides hardware protection and is recommended to be kept at V
IL
before power-down.
6.12 NAND Flash Core Reset Timing
AVD
ADQi
00F0h
CE
F220h
RDY
Operation or Idle
NAND Flash Core reset
Idle
MuxOneNAND
Operation
High-Z
INT
bit
WE
OE
t
Ready
2
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