參數(shù)資料
型號: KFG5616U1M-DIB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: OneNAND256
中文描述: OneNAND256
文件頁數(shù): 82/93頁
文件大?。?/td> 1223K
代理商: KFG5616U1M-DIB
OneNAND256
FLASH MEMORY
82
10.4 Asynchronous Write
Parameter
Symbol
KFG5616X1M
Unit
Min
Typ
Max
WE Cycle Time
t
WC
70
-
-
ns
AVD low pulse width
t
AVDP
12
-
-
ns
Address Setup to rising edge of AVD
t
AAVDS
7
-
-
ns
Address Setup to falling edge of WE
t
AWES
0
Address Hold to rising edge of AVD
t
AAVDH
7
-
-
ns
Address Hold from rising edge of WE
t
AH
10
ns
Data Setup to rising edge of WE
t
DS
10
-
-
ns
Data Hold from rising edge of WE
t
DH
4
-
-
ns
CE Setup to falling edge of WE
t
CS
0
-
-
ns
CE Hold from rising edge of WE
AVD toggled
t
CH1
0
-
-
ns
CE Hold from rising edge of WE
AVD tied to CE
t
CH2
10
-
-
ns
WE Pulse Width
t
WPL
40
-
-
ns
WE Pulse Width High
t
WPH
30
-
-
ns
AVD Disable to WE Disable
t
VLWH
15
-
-
ns
WE Disable to AVD Enable
t
WEA
15
-
-
ns
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