參數(shù)資料
型號： KFG5616U1M-DIB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁數(shù)： 41/93頁
文件大?。?/td> 1223K
代理商： KFG5616U1M-DIB
OneNAND256
FLASH MEMORY
41
8.3.3 Hot Reset
Hot reset means that the host resets the device by reset command(Note 2), and then the device logic stops all current operation and
executes internal reset operation(Note 1) , and resets current NAND Flash core operation. Hot reset has no effect on contents of
BootRAM and DataRAM.
Figure 7. Hot Reset Timings
NOTE:
1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept
unchanged after Warm/Hot reset operations.
2. Reset command : Command based reset or Register based reset
3. BP(Boot Partition) : BootRAM area[0000h~01FFh, 8000h~800Fh]
AVD
BP(Note 3)
or F220h
INT
A0~A15
WE
CE
RDY
Operation or Idle
OneNAND reset
Idle
OneNAND
Operation
High-Z
DQ0~DQ15
00F0h
or 00F3h
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