參數(shù)資料
型號： KFG5616U1M-DIB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁數(shù)： 12/93頁
文件大?。?/td> 1223K
代理商： KFG5616U1M-DIB
OneNAND256
FLASH MEMORY
12
Page:1KB+32B
Sector(main area):512B
Sector(spare area):16B
BootRAM 0
BootRAM 1
DataRAM 0_0
DataRAM 0_1
BootRAM
Sector
DataRAM 0
DataRAM 1_0
DataRAM 1_1
DataRAM 1
{
Main area data
(512B)
Spare area data
(16B)
{
Mai(512B)
Spar(16B)
(BufferRAM)
(NAND array)
Figure 2. BufferRAM and NAND array structure
Block:
64pages
64KB+2KB
NOTE
:
1)
The 1st word of spare area in 1st and 2nd page of every invalid block is reserved for the invalid block information by manufacturer.
Please refer to page 65 about the details.
2) These words are managed by internal ECC logic. So it is recommended that the important data like LSN(Logical Sector Number)
are written.
3) These words are reserved for the future purpose by manufacture. These words will be dedicated to internal logic.
4) These words are for free usage.
5)
The 5th, 6th and 7th words are dedicated to internal ECC logic. So these words are only readable. The other words are program-
mable by command.
6)
ECCm 1st, ECCm 2nd, ECCm 3rd: ECC code for Main area data
7)
ECCs 1st, ECCs 2nd: ECC code for 2nd and 3rd word of spare area.
Figure 3. Spare area of NAND array assignment
{
1
st
W
ECCm
1st
ECCm
2nd
ECCm
3rd
ECCs
1st
ECCs
2nd
LSB
MSB
2
nd
W
3
rd
W
4
th
W
5
th
W
6
th
W
7
th
W
8
th
W
FFh
(Note3)
Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3
Note4 Note4
Main area
256W
Main area
256W
Spare
area
8W
Spare
area
8W
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