參數(shù)資料
型號(hào)： KFG5616U1M-DIB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁(yè)數(shù)： 10/93頁(yè)
文件大?。?/td> 1223K
代理商： KFG5616U1M-DIB
OneNAND256
FLASH MEMORY
10
TERMS, ABBREVIATIONS AND DEFINITIONS
B (capital letter)
Byte, 8bits
W (capital letter)
Word, 16bits
b (lower-case letter)
Bit
ECC
Error Correction Code
Calculated ECC
ECC which has been calculated during load or program access
Written ECC
ECC which has been stored as data in the NAND Flash Array or in the BufferRAM
BufferRAM
Internal Buffer in OneNAND, consists of BootRAM and DataRAM
BootRAM
for reserving Bootcode, 1KB size
DataRAM
for data buffering, 2KB size
Memory
NAND Flash array which is embedded on OneNAND
Sector
Partial unit of page, of which size is 512B for main area and 16B for spare area data.
It is the minimum Load/Program/Copy-Back program unit while one~two sector operation is
available
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
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