參數(shù)資料
型號(hào)： KFG5616U1M-DIB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁(yè)數(shù)： 58/93頁(yè)
文件大?。?/td> 1223K
代理商： KFG5616U1M-DIB
OneNAND256
FLASH MEMORY
58
Figure 21. OTP Load operation flow-chart
8.10.1 OTP Load(OTP Access+Load NAND)
OTP area is separated from NAND Flash Array, so it is accessed by OTP Access command instead of FBA. The content of OTP
could be loaded with the same sequence as normal load operation after being accessed by the command. If user wants to exit from
OTP access mode, Cold, Warm, Hot, or NAND Flash Core Reset operation should be done.
Start
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’FPA, FSA’ of Flash
1)
Add: F107h DQ=FPA, FSA
OTP Load completed
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Do Cold/Warm/Hot
/NAND Flash Core reset
OTP Exit
Host reads data from
DataRAM
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
Write ’FBA’ of Flash
1)
Add: F100h DQ=FBA
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