參數(shù)資料
型號(hào): KBE00G003M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述: NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁數(shù): 51/89頁
文件大小: 1238K
代理商: KBE00G003M-D411
KBE00G003M-D411
MCP MEMORY
July 2005
51
Revision 0.1
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
Symbol
KBE00F003M-D411
Unit
Note
Min
Max
CLK cycle time
CAS latency=3
t
CC
9
1000
ns
1
CLK to valid output delay
CAS latency=3
t
SAC
7
ns
1,2
Output data hold time
CAS latency=3
t
OH
2.0
ns
2
CLK high pulse width
t
CH
3.0
ns
3
CLK low pulse width
t
CL
3.0
ns
3
Input setup time
t
SS
2.0
ns
3
Input hold time
t
SH
1.5
ns
3
CLK to output in Low-Z
t
SLZ
1
ns
2
CLK to output in Hi-Z
CAS latency=3
t
SHZ
7
ns
相關(guān)PDF資料
PDF描述
KBE00S009M 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2503 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S009M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KB-E100SRW 功能描述:LED 顯示器和配件 Red 640nm 90mcd Diffused Light Bar RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數(shù)位數(shù)量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube