參數(shù)資料
型號: KBE00G003M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述: NAND閃存的512Mb * 2移動SDRAM 256Mb的* 2
文件頁數(shù): 42/89頁
文件大?。?/td> 1238K
代理商: KBE00G003M-D411
KBE00G003M-D411
MCP MEMORY
July 2005
42
Revision 0.1
Figure 21. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 21 below.
Table5. Device Status
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
I/O
0
~
7
R/B
t
RST
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