參數(shù)資料
型號(hào)： K4H510738E
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125
中文描述： 堆疊的512Mb電子芯片DDR SDRAM內(nèi)存規(guī)格（x4/x8）
文件頁數(shù)： 8/22頁
文件大?。?/td> 191K
代理商： K4H510738E
DDR SDRAM
DDR SDRAM stacked 512Mb E-die (x4/x8)
Rev. 1.0 July. 2003
st. 32M x 4Bit x 4 Banks / st. 16M x 8Bit x 4 Banks Double Data Rate SDRAM
The K4H510638E / K4H510738E is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,553,332 / 4x
16,777,216 words by 4/ 8bits, fabricated with SAMSUNG
′
s high performance CMOS technology. Synchronous features with Data Strobe
allow extremely high performance up to 266Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating fre-
quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem-
ory system applications.
General Description
Absolute Maximum Rating
Parameter
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-0.5 ~ 3.6
Unit
V
Voltage on any pin relative to V
SS
Voltage on V
DD
& V
DDQ
supply relative to V
SS
Storage temperature
-1.0 ~ 3.6
V
-55 ~ +150
°
C
Power dissipation
1.5
W
Short circuit current
50
mA
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 70
°
C)
Parameter
Symbol
V
DD
Min
2.3
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
2.7
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
V
DDQ
V
REF
V
TT
V
IH
(DC)
V
IL
(DC)
V
IN
(DC)
V
ID
(DC)
VI(Ratio)
I
I
I
OZ
2.3
2.7
V
V
0.49*VDDQ
V
REF
-0.04
0.51*VDDQ
V
REF
+0.04
1
V
2
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Normal strengh driver) ;V
OUT
= V
TT
+ 0.84V
Output High Current(Normal strengh driver) ;V
OUT
= V
TT
- 0.84V
Output High Current(Half strengh driver) ;V
OUT
= V
TT
+ 0.45V
Output High Current(Half strengh driver) ;V
OUT
= V
TT
- 0.45V
V
REF
+0.15
-0.3
-0.3
0.36
0.71
-2
-5
V
DDQ
+0.3
V
REF
-0.15
V
DDQ
+0.3
V
DDQ
+0.6
1.4
2
5
V
V
V
V
-
uA
uA
3
4
I
OH
-16.8
mA
I
OL
16.8
mA
I
OH
-9
mA
I
OL
9
mA
1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.
Peak-to peak noise on VREF may not exceed +/-2% of the dc value.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of V
REF
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
Note :
相關(guān)PDF資料
PDF描述
K4H510838D-LA2 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H510838D-LB0 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H511638D-UCC 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H510838C-UC 512Mb C-die DDR SDRAM Specification
K4H510838C-ZLCC DIN Audio Connector; No. of Contacts:7; Contact Termination:Solder; Mounting Type:Cable; Gender:Male RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H510738E-TC/LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
K4H510738E-TC/LAA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
K4H510738E-TC/LB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
K4H510838A-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510838A-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*