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參數(shù)資料
| 型號(hào)： | K4H510738E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| 中文描述： | 堆疊的512Mb電子芯片DDR SDRAM內(nèi)存規(guī)格（x4/x8） |
| 文件頁數(shù)： | 16/22頁 |
| 文件大小： | 191K |
| 代理商： | K4H510738E |
DDR SDRAM
DDR SDRAM stacked 512Mb E-die (x4/x8)
Rev. 1.0 July. 2003
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
AC CHARACTERISTICS
DDR266
DDR200
PARAMETER
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
TBD
0.67
1.5
e,m
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510738E-TC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510738E-TC/LAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510738E-TC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510838A-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838A-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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