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參數(shù)資料
| 型號： | K4H510738E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| 中文描述： | 堆疊的512Mb電子芯片DDR SDRAM內(nèi)存規(guī)格（x4/x8） |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 191K |
| 代理商： | K4H510738E |
DDR SDRAM
DDR SDRAM stacked 512Mb E-die (x4/x8)
Rev. 1.0 July. 2003
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe DQS
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
DM for write masking only (x4, x8)
Auto & Self refresh
7.8us refresh interval(8K/64ms refresh)
Maximum burst refresh cycle : 8
66pin TSOP II package
Ordering Information
Part No.
Org.
Max Freq.
Interface
Package
K4H510638E-TC/LAA
st.128M x 4
AA(DDR266@CL=2)
SSTL2
66pin TSOP II
K4H510638E-TC/LA2
A2(DDR266@CL=2)
K4H510638E-TC/LB0
B0(DDR266@CL=2.5)
K4H510738E-TC/LAA
st.64M x 8
AA(DDR266@CL=2)
SSTL2
66pin TSOP II
K4H510738E-TC/LA2
A2(DDR266@CL=2)
K4H510738E-TC/LB0
B0(DDR266@CL=2.5)
Key Features
*CL : CAS Latency
Operating Frequencies
AA(DDR266@CL=2.0)
133MHz
133MHz
2-2-2
A2(DDR266@CL=2.0)
133MHz
133MHz
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
2.5-3-3
Speed @CL2
Speed @CL2.5
CL-tRCD-tRP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510838D-LA2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-UCC | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838C-UC | 512Mb C-die DDR SDRAM Specification |
| K4H510838C-ZLCC | DIN Audio Connector; No. of Contacts:7; Contact Termination:Solder; Mounting Type:Cable; Gender:Male RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510738E-TC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510738E-TC/LAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510738E-TC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510838A-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838A-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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