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參數(shù)資料
| 型號： | K4H510738E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| 中文描述： | 堆疊的512Mb電子芯片DDR SDRAM內(nèi)存規(guī)格（x4/x8） |
| 文件頁數(shù)： | 14/22頁 |
| 文件大小： | 191K |
| 代理商： | K4H510738E |
DDR SDRAM
DDR SDRAM stacked 512Mb E-die (x4/x8)
Rev. 1.0 July. 2003
AC Timming Parameters & Specifications
Parameter
Symbol
AA
(DDR266@CL=2.0)
Min
A2
(DDR266@CL=2.0)
Min
B0
(DDR266@CL=2.5))
Min
Unit
Note
Max
Max
Max
Row cycle time
tRC
60
65
65
ns
Refresh row cycle time
tRFC
75
75
75
ns
Row active time
tRAS
45
120K
45
120K
45
120K
ns
RAS to CAS delay
tRCD
15
20
20
ns
Row precharge time
tRP
15
20
20
ns
Row active to Row active delay
tRRD
15
15
15
ns
Write recovery time
tWR
15
15
15
ns
Last data in to Read command
tWTR
1
1
1
tCK
Col. address to Col. address delay
tCCD
1
1
1
tCK
Clock cycle time
CL=2.0
tCK
7.5
12
7.5
12
10
12
ns
CL=2.5
7.5
12
7.5
12
7.5
12
ns
Clock high level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQS-out access time from CK/CK
tDQSCK
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
tAC
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.5
-
0.5
-
0.5
ns
12
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
0
ns
3
DQS-in hold time
tWPRE
0.25
0.25
0.25
tCK
DQS falling edge to CK rising-setup time
tDSS
0.2
0.2
0.2
tCK
DQS falling edge from CK rising-hold time
tDSH
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
tCK
DQS-in cycle time
tDSC
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Address and Control Input setup time(fast)
tIS
0.9
0.9
0.9
ns
i,5.7~9
Address and Control Input hold time(fast)
tIH
0.9
0.9
0.9
ns
i,5.7~9
Address and Control Input setup time(slow)
tIS
1.0
1.0
1.0
ns
i, 6~9
Address and Control Input hold time(slow)
tIH
1.0
1.0
1.0
ns
i, 6~9
Data-out high impedence time from CK/CK
tHZ
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
1
Data-out low impedence time from CK/CK
tLZ
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
1
Output Slew Rate Matching Ratio(rise to fall)
tSLMR
0.67
1.5
0.67
1.5
0.67
1.5
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相關(guān)代理商/技術(shù)參數(shù) |
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| K4H510738E-TC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510738E-TC/LAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510738E-TC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
| K4H510838A-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838A-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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