參數(shù)資料
型號(hào): K4F661612D-TI
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
中文描述: 4米× 16位的CMOS動(dòng)態(tài)RAM的快速頁(yè)面模式
文件頁(yè)數(shù): 27/35頁(yè)
文件大小: 400K
代理商: K4F661612D-TI
CMOS DRAM
K4F661612D,
K4F641612D
Industrial Temperature
R A S
V
IH
-
V
IL
-
U C A S
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
O E
V
IH
-
V
IL
-
COLUMN
ADDRESS
R O W
A D D R .
t
RASP
t
RP
t
ASR
t
CRP
D o n
t care
FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
U n d e f i n e d
L C A S
V
IH
-
V
IL
-
V
IH
-
V
IL
-
D Q 0 ~ D Q 7
V
IH
-
V
IL
-
D Q 8 ~ D Q 1 5
t
RPC
t
RHCP
t
R A D
t
RAH
t
CAH
t
C A H
t
ASC
t
C A H
t
ASC
VALID
DATA-IN
t
DS
ó
COLUMN
ADDRESS
COLUMN
ADDRESS
t
RCD
t
C R P
t
PC
t
PC
t
CAS
t
CP
t
CAS
t
CP
t
CAS
t
RSH
ó
t
CSH
t
ASC
ó
ó
t
W P
t
W C S
t
W C H
t
WP
t
W C S
t
WCH
t
W P
t
W C S
t
WCH
ó
ó
ó
VALID
DATA-IN
VALID
DATA-IN
ó
ó
t
DH
t
DS
t
D H
t
DS
t
D H
N O T E : D
OUT
= O P E N
ó
ó
t
RAL
相關(guān)PDF資料
PDF描述
K4F661612D-TP 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4H1G0838A-TCA0 DIODE ZENER SINGLE 200mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-323 3K/REEL
K4H641638A-TCA0 DIODE ZENER SINGLE 150mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-523 3K/REEL
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