參數(shù)資料
型號: HYS72T32000HP
廠商: QIMONDA
英文描述: 240-Pin Registered DDR2 SDRAM Modules
中文描述: 240針DDR2 SDRAM的注冊模塊
文件頁數(shù): 25/53頁
文件大?。?/td> 1264K
代理商: HYS72T32000HP
Internet Data Sheet
Rev. 1.01, 2006-09
03292006-ZZHP-PR83
25
HYS72T[32/64]xxxHP–[3S/3.7]–A
Registered DDR2 SDRAM Modules
Data hold skew factor
Average periodic refresh Interval
t
QHS
t
REFI
75
400
7.8
3.9
ps
μ
s
μ
s
ns
14)15)
16)21)
Auto-Refresh to Active/Auto-Refresh
command period
Auto-Refresh to Active/Auto-Refresh
command period
Auto-Refresh to Active/Auto-Refresh
command period
Auto-Refresh to Active/Auto-Refresh
command period
Precharge-All (4 banks) command period
Precharge-All (8 banks) command period
Read preamble
Read postamble
Active bank A to Active bank B command
period
t
RFC
17)
t
RFC
105
ns
18)
t
RFC
127.5
ns
19)
t
RFC
197.5
ns
20)
t
RP
t
RP
t
RPRE
t
RPST
t
RRD
t
RP
+ 1
t
CK
15 + 1tCK
0.9
0.40
7.5
10
7.5
0.25 x
t
CK
0.40
15
1.1
0.60
0.60
ns
ns
t
CK
t
CK
ns
ns
ns
t
CK
t
CK
ns
14)
14)
14)21)
16)23)
Internal Read to Precharge command delay
Write preamble
Write postamble
Write recovery time for write without Auto-
Precharge
Write recovery time for write with Auto-
Precharge
Internal Write to Read command delay
Exit power down to any valid command
(other than NOP or Deselect)
Exit active power-down mode to Read
command (slow exit, lower power)
Exit precharge power-down to any valid
command (other than NOP or Deselect)
Exit Self-Refresh to non-Read command
Exit Self-Refresh to Read command
1) For details and notes see the relevant QIMONDA component data sheet
2)
V
DDQ
= 1.8 V
±
0.1 V;
V
DD
= 1.8 V
±
0.1 V. See notes
5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until
V
REF
stabilizes. During the period before
V
REF
stabilizes, CKE = 0.2 x
V
DDQ
is recognized as low.
7) The output timing reference voltage level is
V
TT
.
t
RTP
t
WPRE
t
WPST
t
WR
22)
WR
t
WR
/
t
CK
t
CK
23)
t
WTR
t
XARD
7.5
2
ns
t
CK
24)
25)
t
XARDS
6 – AL
t
CK
25)
t
XP
2
t
CK
t
XSNR
t
XSRD
t
RFC
+10
200
ns
t
CK
Parameter
Symbol
DDR2–533
Unit
Note
1)2)3)4)5)
6)7)
Min.
Max.
相關(guān)PDF資料
PDF描述
HYS72T32000HR 240-Pin Registered DDR2 SDRAM Modules
HYS72T32000HR-2.5-A 240-Pin Registered DDR2 SDRAM Modules
HYS72T32000HR-3.7-A 240-Pin Registered DDR2 SDRAM Modules
HYS72T32000HR-3-A 240-Pin Registered DDR2 SDRAM Modules
HYS72T32000HR-3S-A 240-Pin Registered DDR2 SDRAM Modules
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