參數(shù)資料
型號: HYS72T32000HP
廠商: QIMONDA
英文描述: 240-Pin Registered DDR2 SDRAM Modules
中文描述: 240針DDR2 SDRAM的注冊模塊
文件頁數(shù): 22/53頁
文件大?。?/td> 1264K
代理商: HYS72T32000HP
Internet Data Sheet
Rev. 1.01, 2006-09
03292006-ZZHP-PR83
22
HYS72T[32/64]xxxHP–[3S/3.7]–A
Registered DDR2 SDRAM Modules
FIGURE 2
Method for calculating transitions and endpoint
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual
t
JIT.DUTY
of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has
t
JIT.DUTY.MIN
= – 72 ps
and
t
JIT.DUTY.MAX
= + 93 ps, then
t
=
t
+
t
= 0.4 x
t
– 72 ps = + 928 ps and
t
RPST.MAX(DERATED)
=
t
RPST.MAX
+
t
JIT.DUTY.MAX
t
CK.AVG
+ 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) For these parameters, the DDR2 SDRAM device is characterized and verified to support
t
= RU{
t
PARAM
/
t
CK.AVG
}, which is in clock
cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support
t
nRP
RP
t
CK.AVG
}, which is in
clock cycles, if all input clock jitter specifications are met. This means: For DDR2–667 5–5–5, of which
t
= 15 ns, the device will support
t
= RU{
t
/
t
} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at
Tm + 5 is valid even if (Tm + 5 - Tm) is less than 15 ns due to input clock jitter.
29) DAL = WR + RU{
t
(ns) /
t
(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For
t
, if the result
of the division is not already an integer, round up to the next highest integer.
t
CK
refers to the application clock period. Example: For
DDR2–533 at
t
CK
= 3.75 ns with
t
WR
programmed to 4 clocks.
t
DAL
= 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
30)
t
DAL.nCK
= WR [nCK] +
t
nRP.nCK
= WR + RU{
t
RP
[ps] /
t
CK.AVG
[ps] }, where WR is the value programmed in the EMR.
31)
t
WTR
is at lease two clocks (2 x
t
CK
) independent of operation frequency.
32)
t
of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of
t
IS
+ 2 x
t
CK
+
t
IH
.
33) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measured from
t
AOND
.
34) ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from
t
AOFD
.
35) When the device is operated with input clock jitter, this parameter needs to be derated by {–
t
t
} and {–
t
t
ERR(6-10PER).MIN
} of the actual input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter
into a DDR2–667 SDRAM has
t
= – 272 ps,
t
ERR(6- 10PER).MAX
= + 293 ps,
t
JIT.DUTY.MIN
= – 106 ps and
t
JIT.DUTY.MAX
= + 94 ps,
then
t
AOF.MIN(DERATED)
=
t
AOF.MIN
+ {–
t
t
t
AOF.MAX(DERATED)
=
t
AOF.MAX
+ {–
t
JIT.DUTY.MIN
ERR(6-10PER).MIN
} = 1050 ps + {106 ps + 272 ps} = + 1428 ps. (Caution on the MIN/MAX usage!)
tHZ
tRPST
end point
T1 T2
VOH - x mV
VOH - 2x mV
VOL + 2x mV
VOL + x mV
tLZ
tRPRE
begin point
T2
T1
VTT + 2x mV
VTT + x mV
VTT - x mV
VTT - 2x mV
tLZ,tRPRE
begin point
= 2*T1-T2
tHZ,tRPST
end point
= 2*T1-T2
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