參數(shù)資料
型號(hào)： HYE25L256160AC-8*
英文描述： ?256M (16Mx16) 125MHz 2-2-2 Ext. Temp. ?
中文描述： ？256M（16Mx16顯示）125MHz的2-2-2分機(jī)。溫度。 ？
文件頁(yè)數(shù)： 16/49頁(yè)
文件大?。?/td> 292K
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
16
12/01
Programmable Self-Refresh Currents:
Notes:
3. These parameters depend on the frequency. These values are measured at 133 MHz for -7 &
-7.5 and at 100 MHz for -8 parts. Input signals are changed once during
t
CK
. If the devices are
operating at a frequency less than the maximum operation frequency, these current values are
multiplied by 1/ freq, meaning operation at half the maximum frequency reduces these current
value by a factor of 2.
4. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the
V
DDQ
current is excluded.
Parameter & Test Condition
Extended Mode
Register M[4:3]
Tcase [
o
C]
85
o
C max.
70
o
C max.
45
o
C max.
15
o
C max.
85
o
C max.
70
o
C max.
45
o
C max.
15
o
C max.
85
o
C max.
70
o
C max.
45
o
C max.
15
o
C max.
Symb. max.
Unit
Note
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
full array activations, all banks
I
CC6
520
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
350
250
210
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
half array activations, Bank 0 +1
I
CC6
380
250
180
160
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
quarter array activation, Bank 0
I
CC6
270
180
130
120
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