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參數(shù)資料
| 型號(hào)： | HYE25L256160AC-8* |
| 英文描述： | ?256M (16Mx16) 125MHz 2-2-2 Ext. Temp. ? |
| 中文描述： | ？256M（16Mx16顯示）125MHz的2-2-2分機(jī)。溫度。 ？ |
| 文件頁數(shù)： | 14/49頁 |
| 文件大?。?/td> | 292K |
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HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
14
12/01
Electrical Characteristics
Absolute Maximum Ratings
Operating Case Temperature Range (commercial).........................................................0 to + 70
°
C
Operating Case Temperature Range (extended) ........................................................ -25 to + 85
°
C
Storage Temperature Range................................................................................... – 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
...................................................................................... – 0.3 to + 3.6 V
Power Dissipation.................................................................................................................... 0.7 W
Data out Current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
.
2.
V
IH
may overshoot to
V
DD
+ 0.8V for pulse width of < 4 ns with 2.5V.
V
IL
may undershoot to
– 0.8 V for pulse width < 4.0 ns with 2.5V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
Recommended Operation and DC Characteristics
T
CASE
= 0 to 70
°
C (commercial) / -25 to 85
o
C (Extended);
V
SS
= 0 V;
V
DD
= 2.5 V nominal, V
DDQ
= 1.8V / 2.5V nominal
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
DRAM Core Supply Voltage
V
DD
V
DDQ
V
IH
V
IL
V
IH
V
IL
V
OH
2.3
2.9
V
I/O Supply Voltage
1.65
2.9
V
DDQ
+ 0.3
+ 0.3
V
DDQ
+ 0.3
+ 0.3
V
Input High Voltage (CMD, Addr.)
0.8 x V
DDQ
–
0.3
V
1, 2
Input Low Voltage (CMD, Addr.)
V
1, 2
Data Input High (Logic 1) Voltage
0.8 x V
DDQ
–
0.3
V
DDQ
- 0.2
V
Data Input Low (Logic 0) Voltage
V
Data Output High (Logic 1) Voltage
(I
OH
=-0.1mA)
Date Output Low (Logic 0) Voltage
(I
OL
=+0.1mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
–
V
V
OL
–
0.2
V
I
I(L)
–
5
5
μ
A
I
O(L)
–
5
5
μ
A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HYE25L256160AF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM |
| HYE25L256160AF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
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