- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367364 > HYE25L256160AC-8* ?256M (16Mx16) 125MHz 2-2-2 Ext. Temp. ? PDF資料下載
參數(shù)資料
| 型號(hào)： | HYE25L256160AC-8* |
| 英文描述： | ?256M (16Mx16) 125MHz 2-2-2 Ext. Temp. ? |
| 中文描述： | ？256M（16Mx16顯示）125MHz的2-2-2分機(jī)。溫度。 ？ |
| 文件頁數(shù)： | 11/49頁 |
| 文件大?。?/td> | 292K |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
11
12/01
Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column
address are possible once the RAS cycle latches the sense amplifiers. The maximum
t
RAS
or the
refresh interval time limits the number of random column accesses. A new burst access can be
done even before the previous burst ends. The interrupt operation at every clock cycle is supported.
When the previous burst is interrupted, the remaining addresses are overridden by the new address
with the full burst length. An interrupt which accompanies an operation change from a read to a write
is possible by exploiting DQM to avoid bus contention.
When two or more banks are activated sequentially, interleaved bank read or write operations are
possible. With the programmed burst length, alternate access and precharge operations on two or
more banks can realize fast serial data access modes among many different pages. Once two or
more banks are activated, column to column interleave operation can be performed between
different pages. When the partial array activation is set, data will get lost when self-refresh is used
in all non activated banks.
Refresh Mode
Mobile-RAM has two refresh modes, Auto Refresh and Self Refresh.
Auto-Refresh
Auto Refresh is similar to the CAS -before-RAS refresh of earlier DRAMs. All banks must be
precharged before applying any refresh mode. An on-chip address counter increments the word
and the bank addresses. No bank information is required for both refresh modes.
Burst Length and Sequence
Burst
Length
Starting
Address
(A2 A1 A0)
Sequential Burst
Addressing
(decimal)
Interleave Burst
Addressing
(decimal)
2
xx0
xx1
0, 1
1, 0
0, 1
1, 0
4
x00
x01
x10
x11
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
8
000
001
010
011
100
101
110
111
0 1 2 3 4 5 6 7
1 2 3 4 5 6 7 0
2 3 4 5 6 7 0 1
3 4 5 6 7 0 1 2
4 5 6 7 0 1 2 3
5 6 7 0 1 2 3 4
6 7 0 1 2 3 4 5
7 0 1 2 3 4 5 6
0 1 2 3 4 5 6 7
1 0 3 2 5 4 7 6
2 3 0 1 6 7 4 5
3 2 1 0 7 6 5 4
4 5 6 7 0 1 2 3
5 4 7 6 1 0 3 2
6 7 4 5 2 3 0 1
7 6 5 4 3 2 1 0
Full Page
nnn
Cn, Cn+1, Cn+2
not supported
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM22100S-60 | x8 Fast Page Mode DRAM Module |
| HYM22100S-70 | x8 Fast Page Mode DRAM Module |
| HYM22100S-80 | x8 Fast Page Mode DRAM Module |
| HYM32V4040GD-60 | x32 Fast Page Mode DRAM Module |
| HYM321110S-60 | x32 Fast Page Mode DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE25L256160AF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM |
| HYE25L256160AF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYE25L256160AF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM |
| HYESD0514P | 制造商:HY 制造商全稱:HY ELECTRONIC CORP. 功能描述:4 Channel Low Capacitance ESD Protection Diode Array |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。