參數(shù)資料
型號(hào)： HYE25L128160AC-7.5
廠商： INFINEON TECHNOLOGIES AG
英文描述： HEX DIE SET,.052/.068/.178/.25
中文描述： BJAWBMSpecialty DRAM的移動(dòng)RAM
文件頁數(shù)： 50/50頁
文件大小： 980K
代理商： HYE25L128160AC-7.5
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
50
2003-02
&KDQJH/LVW
12/18/00
First Revision (Target Datasheet)
01/15/01
Various changes after JEDEC Low Power Task Force meeting in
San Jose, Jan 9-10. 01:
Introduction of a Extended Mode Register for temperature-compensated and par-
tial array Self-Refresh
New Deep Power Down Mode
New 54 BGA package with 9 x 6 ball locations and 3 depop rows.
01/22/01
Truth table for Deep Power Down Mode changed according to latest JEDEC pro-
posal some typos corrected
02/12/01
Pin J8 is
“
A2
”
Extended Mode Register
“
half array BA1=0
”
02/19/01
Extended Mode Register, some clarifications
Datasheet changed to
“
preliminary
”
Outline dimensions for BGA packages added
Electrical pinout for x8 added
03/07/01
Full Page Mode added, thruth table clarified
04/02/01
Pin Configuration for x8 devices corrected : LDQM wird NC und UDQM wird DQM
Deep Power Down Exit waveform changed according to JEDEC ballot
07/02/01
Page 10: Change of power-on description to :
”
9
DD
must be applied before or at the
same time as
9
DDQ
to the specified voltage when the input signals are held in the
“
NOP
”
or
“
DESELECT
”
state
”
08/23/01
Adjusted currents
Introduced CAS Latency 1
Solder Ball Diameter changed
09/18/01
Adjusted currents
Introduced max. package height
11/14/01
Jedec conforming package drawings included
tRCD and tRP for -7.5 changed
Minimum time of deep power down mode added
t
AC
for CAS Latency=1 specified
25/03/02
ICC3N (CKE high) changed from 32ma to 35mA for -7.5
and from 28mA to 31mA for -8.0
28/02/03
p.15: values for ICC1 and ICC5 changed
相關(guān)PDF資料
PDF描述
HYE25L128160AC-75 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYB25L512160AC-75 512MBit Mobile-RAM
HYB25L512160AC-7.5 BJAWBMSpecialty DRAMs Mobile-RAM
HYB25L512160AC 512MBit Mobile-RAM
HYB25M128160C 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE25L128160AC-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYE25L256160AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM
HYE25L256160AC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
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