參數(shù)資料
型號： HYE25L128160AC-7.5
廠商： INFINEON TECHNOLOGIES AG
英文描述： HEX DIE SET,.052/.068/.178/.25
中文描述： BJAWBMSpecialty DRAM的移動RAM
文件頁數(shù)： 14/50頁
文件大?。?/td> 980K
代理商： HYE25L128160AC-7.5
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
14
2003-02
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Operating Case Temperature Range (commercial).........................................................0 to + 70
°
C
Operating Case Temperature Range (extended) ........................................................ -25 to + 85
°
C
Storage Temperature Range...................................................................................
–
55 to + 150
°
C
Input/Output Voltage.........................................................................................
–
0.3 to
9
DD
+ 0.3 V
Power Supply Voltage
9
DD
......................................................................................
–
0.3 to + 3.6 V
Power Dissipation.................................................................................................................... 0.7 W
Data out Current (short circuit) ............................................................................................... 50 mA
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1. All voltages are referenced to
9
.
2.
9
may overshoot to
9
+ 0.8V for pulse width of < 4 ns with 2.5V.
9
may undershoot to
–
0.8 V for pulse width < 4.0 ns with 2.5V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
Recommended Operation and DC Characteristics
T
CASE
= 0 to 70
°
C (commercial) / -25 to 85
o
C (Extended);
V
SS
V
DD
= 2.5 V nominal, V
DDQ
= 1.8V / 2.5V nominal
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
DRAM Core Supply Voltage
V
DD
V
DDQ
V
IH
V
IL
V
IH
V
IL
V
OH
2.3
2.9
V
I/O Supply Voltage
1.65
2.9
V
DDQ
+ 0.3
+ 0.3
V
DDQ
+ 0.3
+ 0.3
V
Input High Voltage (CMD, Addr.)
0.8 x V
DDQ
–
0.3
V
1, 2
Input Low Voltage (CMD, Addr.)
V
1, 2
Data Input High (Logic 1) Voltage
0.8 x V
DDQ
–
0.3
V
DDQ
- 0.2
V
Data Input Low (Logic 0) Voltage
V
Data Output High (Logic 1) Voltage
(I
OH
=-0.1mA)
Date Output Low (Logic 0) Voltage
(I
OL
=+0.1mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
–
V
V
OL
–
0.2
V
I
I(L)
–
5
5
μ
A
I
O(L)
–
5
5
μ
A
相關(guān)PDF資料
PDF描述
HYE25L128160AC-75 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYB25L512160AC-75 512MBit Mobile-RAM
HYB25L512160AC-7.5 BJAWBMSpecialty DRAMs Mobile-RAM
HYB25L512160AC 512MBit Mobile-RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE25L128160AC-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYE25L256160AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM
HYE25L256160AC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
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