- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370785 > HYE25L128160AC-7.5 (INFINEON TECHNOLOGIES AG) HEX DIE SET,.052/.068/.178/.25 PDF資料下載
參數(shù)資料
| 型號： | HYE25L128160AC-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HEX DIE SET,.052/.068/.178/.25 |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 21/50頁 |
| 文件大小： | 980K |
| 代理商： | HYE25L128160AC-7.5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
21
2003-02
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. AC- Parameters
8.1 AC Parameters for a Write Timing
8.2 AC Parameters for a Read Timing
9. Mode Register Set
10. Power on Sequence and Auto Refresh (CBR)
11. Clock Suspension (using CKE)
11. 1 Clock Suspension During Burst Read CAS Latency = 2
11. 2 Clock Suspension During Burst Read CAS Latency = 3
11. 3 Clock Suspension During Burst Write CAS Latency = 2
11. 4 Clock Suspension During Burst Write CAS Latency = 3
12. Power Down Mode and Clock Suspend
13. Self Refresh ( Entry and Exit )
14. Auto Refresh ( CBR )
15. Random Column Read ( Page within same Bank)
15.1 CAS Latency = 2
15.2 CAS Latency = 3
16. Random Column Write ( Page within same Bank)
16.1 CAS Latency = 2
16.2 CAS Latency = 3
17. Random Row Read ( Interleaving Banks) with Precharge
17.1 CAS Latency = 2
17.2 CAS Latency = 3
18. Random Row Write ( Interleaving Banks) with Precharge
18.1 CAS Latency = 2
18.2 CAS Latency = 3
19. Precharge Termination of a Burst
20. Deep Power Down Mode
20.1 Deep Power Down Mode Entry
20.2 Deep Power Down Mode Exit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYE25L128160AC-75 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES |
| HYB25L512160AC-75 | 512MBit Mobile-RAM |
| HYB25L512160AC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB25L512160AC | 512MBit Mobile-RAM |
| HYB25M128160C | 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE25L128160AC-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES |
| HYE25L256160AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM |
| HYE25L256160AC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。