參數(shù)資料
型號(hào): HYE25L128160AC-7.5
廠商: INFINEON TECHNOLOGIES AG
英文描述: HEX DIE SET,.052/.068/.178/.25
中文描述: BJAWBMSpecialty DRAM的移動(dòng)RAM
文件頁(yè)數(shù): 17/50頁(yè)
文件大?。?/td> 980K
代理商: HYE25L128160AC-7.5
HYB/E 25L128160AC
128-MBit Mobile-RAM
INFINEON Technologies
17
2003-02
AC Characteristics
1, 2
T
CASE
= 0 to 70
°
C (commercial) / -25 to 85
o
C (Extended);
V
SS
= 0 V;
V
DD
= 2.5 V nominal, V
DDQ
= 1.8 V nominal,
t
T
= 1 ns
Parameter
Symb.
Unit
Note
-7.5
-8
min.
max.
min.
max.
Clock and Clock Enable
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
t
CK
7.5
9.5
20
8
9.5
20
ns
ns
ns
Clock frequency
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
t
CK
133
105
50
125
105
50
MHz
MHz
Mhz
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
t
AC
5.4
6
19
6
6
19
ns
ns
ns
2, 3, 6
Clock High Pulse Width
t
CH
t
CL
t
T
2.5
3
ns
Clock Low Pulse Width
2.5
3
ns
Transition Time
0.3
1.2
0.5
1.5
ns
Setup and Hold Times
Input Setup Time
t
IS
t
IH
t
CKS
t
CKH
t
RSC
t
SB
1.5
2
ns
4
Input Hold Time
0.8
1
ns
4
CKE Setup Time
1.5
2
ns
4
CKE Hold Time
0.8
1
ns
4
Mode Register Set-up Time
2
2
CLK
Power Down Mode Entry
Time
0
7.5
0
8
ns
Common Parameters
Row to Column Delay Time
t
RCD
t
RP
t
RAS
t
RC
19
19
ns
5
Row Precharge Time
19
19
ns
5
Row Active Time
45
100k
48
100k
ns
5
Row Cycle Time
67
70
ns
5
相關(guān)PDF資料
PDF描述
HYE25L128160AC-75 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYB25L512160AC-75 512MBit Mobile-RAM
HYB25L512160AC-7.5 BJAWBMSpecialty DRAMs Mobile-RAM
HYB25L512160AC 512MBit Mobile-RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE25L128160AC-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
HYE25L256160AC 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM
HYE25L256160AC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM