參數(shù)資料
型號(hào): HYB18H512321BF
廠商: QIMONDA
英文描述: 512-Mbit GDDR3 Graphics RAM
中文描述: 512兆GDDR3顯卡內(nèi)存
文件頁(yè)數(shù): 25/43頁(yè)
文件大?。?/td> 1344K
代理商: HYB18H512321BF
HYB18H512321BF
512-Mbit GDDR3
Internet Data Sheet
Rev. 1.1, 2007-09
05292007-WAU2-UU95
25
5.4
Differential Clock DC and AC Levels
TABLE 14
Differential Clock DC and AC Input conditions (0 °C
T
c
85 °C)
5.5
Output Test Conditions
FIGURE 13
Output Test Circuit
Parameter
Symbol
Limit Values
Unit
Note
Min.
Max.
Clock Input Mid-Point Voltage, CLK and CLK
Clock Input Voltage Level, CLK and CLK
Clock DC Input Differential Voltage, CLK and
CLK
Clock AC Input Differential Voltage, CLK and CLK
V
ID(AC)
AC Differential Crossing Point Input Voltage
V
MP(DC)
V
IN(DC)
V
ID(DC)
0.7
×
V
DDQ
– 0.10
0.42
0.3
0.7
×
V
DDQ
+ 0.10
V
DDQ
+ 0.3
V
DDQ
V
V
V
1)
1) All voltages referenced to
V
SS.
2)
V
ID
is the magnitude of the difference between the input level on CLK and the input level on CLK.
3) The value of
V
IX
is expected to equal 0.7
×
V
DDQ
of the transmitting device and must track variations in the DC level of the same.
1)
1)
0.5
0.7
×
V
DDQ
– 0.15
V
DDQ
+ 0.5
0.7
×
V
DDQ
+ 0.15
V
V
1)2)
V
IX(AC)
1)3)
DQ
DQS
60 Ohm
Test point
V
DDQ
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