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參數(shù)資料
| 型號： | HS-6664RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened 8K x 8 CMOS PROM |
| 中文描述： | 輻射加固8K的× 8的CMOS胎膜早破 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大小： | 222K |
| 代理商： | HS-6664RH |
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
850
Semiconductor
Background Information HS-6664RH Programming
PROGRAMMING SPECIFICATIONS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input “0”
VIL
0.0
0.2
0.8
V
Voltage “1”
VIH
VDD-2
VDD
VDD+0.3
V
6
Programming VDD
VDDPROG
9.0
9.0
9.0
V
2
Operating VDD
VDD1
4.5
5.5
5.5
V
Special Verify
VDD2
4.0
-
6.0
V
3
Delay Time
td
1.0
1.0
-
μ
s
Rise Time
tr
1.0
10.0
10.0
μ
s
Fall Time
tf
1.0
10.0
10.0
μ
s
Chip Enable Pulse Width
TEHEL
20
-
-
ns
Address Valid to Chip Enable Low Time
TAVEL
0
-
-
ns
Chip Enable Low to Output Valid Time
TELQV
-
-
60
ns
Programming Pulse Width
tpw
90
100
110
μ
s
4
Input Leakage at VDD = VDDPROG
tIP
-10
+1.0
10
μ
A
Data Output Current at VDD = VDDPROG
IOP
-
-5.0
-10
mA
Output Pull-Up Resistor
Rn
5
10
15
k
5
Ambient Temperature
T
A
-
25
-
o
C
NOTES:
1. All inputs must track VDD (pin 28) within these limits.
2. VDDPROG must be capable of supplying 500mA. VDDPROG Power Supply tolerance
±
3% (Max.)
3. See Steps 22 through 29 of the Programming Algorithm.
4. See Step 11 of the Programming Algorithm.
5. All outputs should be pulled up to VDD through a resistor of value Rn.
6. Except during programming (See Programming Cycle Waveforms).
HS-6664RH
8K x 8 CMOS PROM
Spec Number
518741
DESIGN INFORMATION
September 1995
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HS-6664RH_00 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 CMOS PROM |
| HS-6664RH-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 CMOS PROM |
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