參數(shù)資料
型號: HB52R1289E22
廠商: Hitachi,Ltd.
英文描述: 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM)
中文描述: 1 GB的注冊SDRAM的內(nèi)存(1GB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 16/21頁
文件大?。?/td> 98K
代理商: HB52R1289E22
HB52R1289E22-A6B/B6B
16
AC Characteristics (Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V) (cont)
Notes:
1.AC measurement assumes t
T
= 1 ns. Reference level for timing of input signals is 1.5 V.
2.Access time is measured at 1.5 V. Load condition is C
L
= 50 pF.
3.t
LZ
(max) defines the time at which the outputs achieves the low impedance state.
4.t
HZ
(max) defines the time at which the outputs achieves the high impedance state.
5.t
CES
defines CKE setup time to CK rising edge except power down exit command.
Test Conditions
Input and output timing reference levels: 1.5 V
Input waveform and output load: See following figures
Ambient illuminance: Under 100 lx
HB52R1289E22
-A6B/B6B
Parameter
CKE hold time
Command setup time
Command hold time
Ref/Active to Ref/Active command period t
RC
Active to precharge command period
Active command to column command
(same bank)
Precharge to active command period
Write recovery or data-in to precharge
lead time
Active (a) to Active (b) command period t
RRD
Transition time (rise to fall)
Refresh period
HITACHI-
Symbol
t
CEH
t
CS
t
CH
PC100
Symbol
Thi
Tsi
Thi
Trc
Tras
Trcd
Min
3.0
2.6
3.0
70
50
20
Max
120000
Unit
ns
ns
ns
ns
ns
ns
Notes
1
1
1
1
1
1
t
RAS
t
RCD
t
RP
t
DPL
Trp
Tdpl
20
20
ns
ns
1
1
Trrd
20
1
5
64
ns
ns
ms
1
t
T
t
REF
t
T
2.4 V
0.4 V0.8 V
2.0 V
input
t
T
DQ
CL
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