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參數(shù)資料
| 型號(hào)： | HB52R1289E22 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM) |
| 中文描述： | 1 GB的注冊(cè)SDRAM的內(nèi)存（1GB的寄存同步的DRAM內(nèi)存） |
| 文件頁(yè)數(shù)： | 14/21頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | HB52R1289E22 |
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HB52R1289E22-A6B/B6B
14
DC Characteristics (Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
Notes:
1.I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2.One bank operation.
3.Input signals are changed once per one clock.
4.Input signals are changed once per two clocks.
5.Input signals are changed once per four clocks.
6.After power down mode, CK operating current.
7.After power down mode, no CK operating current.
8.After self refresh mode set, self refresh current.
HB52R1289E22
-A6B
Min
-B6B
Min
Parameter
Operating current
(CE latency = 3)
(CE latency = 4)
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non
power down
Active standby current in
power down
Active standby current in
non power down
Burst operating current
(CE latency = 3)
(CE latency = 4)
Refresh current
(CE latency = 3)
(CE latency = 4)
Self refresh current
Symbol
Max
Max
Unit
Test conditions
Burst length = 1
t
RC
= min
Notes
1, 2, 3
I
CC1
I
CC1
I
CC2P
—
—
—
2945
2945
803
—
—
—
—
2945
803
mA
mA
mA
CKE = V
IL
, t
CK
= 12
ns
CKE = V
IL
, t
CK
=
∞
6
I
CC2PS
—
767
—
767
mA
7
I
CC2N
—
1415
—
1415
mA
CKE, S = V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12
ns
CKE, S = V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
4
I
CC3P
—
839
—
839
mA
1, 2, 6
I
CC3N
—
1775
—
1775
mA
1, 2, 4
I
CC4
I
CC4
—
—
2945
2945
—
—
—
2945
mA
mA
1, 2, 5
I
CC5
I
CC5
I
CC6
—
—
—
5195
5195
803
—
—
—
—
5195
803
mA
mA
mA
t
RC
= min
3
V
IH
≥
V
CC
– 0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
I
OH
= –4 mA
I
OL
= 4 mA
8
Input leakage current
Output leakage current
I
LI
I
LO
–10
–10
10
10
–10
–10
10
10
μ
A
μ
A
Output high voltage
Output low voltage
V
OH
V
OL
2.4
—
—
0.4
2.4
—
—
0.4
V
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R1289E22-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E2-A6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2-B6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2U-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM |
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