參數(shù)資料
型號(hào): HB52F168EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 53/71頁
文件大?。?/td> 906K
代理商: HB52F168EN
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
53
2. Same bank:
The consecutive write command from read with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1. Different bank:
When some banks are in the active state, the second read command (another bank) is
executed. However, in case of a burst write, data will continue to be written until one clock before the read
command is executed. The internal auto-precharge of one bank starts at the next clock of the second com-
mand.
Write with Auto Precharge to Read Command Interval
(Different bank)
2. Same bank:
The consecutive read command from write with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Read command to Precharge command interval (same bank):
CK
Command
BA
Dout
Din
READ A
WRIT
in B0
in B1
in B2
in B3
Burst Length = 4
bank0
Read A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
CL = 3
High-Z
CK
Command
BA
Dout
Din
WRIT A
READ
out B0
out B1
out B2
out B3
CE
Latency = 3
Burst Length = 4
bank0
Write A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
in A0
相關(guān)PDF資料
PDF描述
HB52F169EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
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