參數(shù)資料
型號(hào)： HB52F168EN
廠商： Hitachi,Ltd.
英文描述： 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述： 64 MB的無緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 48/71頁(yè)
文件大?。?/td> 906K
代理商： HB52F168EN
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
48
Command Intervals
Read command to Read command interval:
1. Same bank, same ROW address:
When another read command is executed at the same ROW address
of the same bank as the preceding read command execution, the second read can be performed after an inter-
val of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read
by the second command will be valid.
READ to READ Command Interval (same ROW address in same bank)
2. Same bank, different ROW address:
When the ROW address changes on same bank, consecutive read
commands cannot be executed; it is necessary to separate the two read commands with a precharge command
and a bank-active command.
3. Different bank:
When the bank changes, the second read can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. Even when the first command is a burst
read that is not yet finished, the data read by the second command will be valid.
READ to READ Command Interval
(different bank)
Write command to Write command interval:
1. Same bank, same ROW address:
When another write command is executed at the same ROW address
of the same bank as the preceding write command, the second write can be performed after an interval of no
less than 1 clock. In the case of burst writes, the second write command has priority.
CK
Command
Dout
out B3
Address
out B1 out B2
BA
ACTV
Row
Column A
READ
READ
Column B
out A0 out B0
Bank0
Active
Column =A
Read
Column =B
Read
Column =A
Dout
Column =B
Dout
CE
Latency = 3
Burst Length = 4
Bank 0
CK
Command
Dout
out B3
Address
out B1 out B2
BA
ACTV
Row 0
Row 1
ACTV
READ
Column A
out A0 out B0
Bank0
Active
Bank3
Active
Bank0
Read
Bank3
Read
READ
Column B
Bank0
Dout
Bank3
Dout
CE
Latency = 3
Burst Length = 4
相關(guān)PDF資料
PDF描述
HB52F169EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52F168GB-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F168GB-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F168GB-B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM
HB52F328DC-75B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F328DC-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
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